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SIDR608EP-T1-RE3

零件编号 SIDR608EP-T1-RE3
产品分类 单 FET、MOSFET
制造商 Vishay / Siliconix
描述 N-CHANNEL 45 V (D-S) 175C MOSFET
封装
包装 卷带式 (TR)
数量 0
RoHS 状态 YES
分享
库存:
总数

数量

价格

总价

1

$2.6670

$2.6670

10

$2.2155

$22.1550

100

$1.7640

$176.4000

500

$1.4910

$745.5000

1000

$1.2600

$1,260.0000

3000

$1.1970

$3,591.0000

6000

$1.1550

$6,930.0000

9000

$1.1130

$10,017.0000

获取报价信息
产品参数
产品说明
PDF(1)
类型描述
制造商Vishay / Siliconix
系列TrenchFET®
包装卷带式 (TR)
产品状态ACTIVE
包装/箱PowerPAK® SO-8
安装类型Surface Mount
工作温度-55°C ~ 175°C (TJ)
技术MOSFET (Metal Oxide)
场效应管类型N-Channel
电流 - 连续漏极 (Id) @ 25°C56A (Ta), 228A (Tc)
Rds On(最大)@Id、Vgs1.2mOhm @ 20A, 10V
功耗(最大)7.5W (Ta), 125W (Tc)
Vgs(th)(最大值)@Id2.3V @ 250µA
供应商设备包PowerPAK® SO-8DC
驱动电压(最大导通电阻、最小导通电阻)4.5V, 10V
Vgs(最大)+20V, -16V
漏源电压 (Vdss)45 V
栅极电荷 (Qg)(最大值)@Vgs167 nC @ 10 V
输入电容 (Ciss)(最大值)@Vds8900 pF @ 20 V

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IC EEPROM 1KBIT MICROWIRE 8SOIC
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SENSOR OPT REFLECTIVE 5MM 5DIP
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RES 5.1K OHM 5% 3W AXIAL
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RES 43K OHM 5% 3W AXIAL
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