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G2K2P10D3E

零件编号 G2K2P10D3E
产品分类 单 FET、MOSFET
制造商 Goford Semiconductor
描述 MOSFET P-CH ESD 100V 10A DFN3*3-
封装
包装 卷带式 (TR)
数量 4970
RoHS 状态 YES
分享
库存:
总数

数量

价格

总价

1

$0.6090

$0.6090

10

$0.5145

$5.1450

100

$0.3570

$35.7000

500

$0.2835

$141.7500

1000

$0.2310

$231.0000

2000

$0.1995

$399.0000

5000

$0.1890

$945.0000

10000

$0.1785

$1,785.0000

25000

$0.1785

$4,462.5000

50000

$0.1680

$8,400.0000

获取报价信息
产品参数
产品说明
PDF(1)
类型描述
制造商Goford Semiconductor
系列-
包装卷带式 (TR)
产品状态ACTIVE
包装/箱8-PowerVDFN
安装类型Surface Mount
工作温度-55°C ~ 150°C (TJ)
技术MOSFET (Metal Oxide)
场效应管类型P-Channel
电流 - 连续漏极 (Id) @ 25°C10A (Tc)
Rds On(最大)@Id、Vgs210mOhm @ 6A, 10V
功耗(最大)31W (Tc)
Vgs(th)(最大值)@Id2.5V @ 250µA
供应商设备包8-DFN (3.15x3.05)
驱动电压(最大导通电阻、最小导通电阻)4.5V, 10V
Vgs(最大)±20V
漏源电压 (Vdss)100 V
栅极电荷 (Qg)(最大值)@Vgs33 nC @ 10 V
输入电容 (Ciss)(最大值)@Vds1668 pF @ 50 V

替代型号
G2K2P10D3E
谷峰-GOFORD
Trench Mosfet
相似型号
G2K2P10D3E
谷峰-GOFORD
Trench Mosfet

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