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BSC105N15LS5ATMA1

零件编号 BSC105N15LS5ATMA1
产品分类 单 FET、MOSFET
制造商 IR (Infineon Technologies)
描述 TRENCH >=100V
封装
包装 卷带式 (TR)
数量 3500
RoHS 状态 YES
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库存:
总数

数量

价格

总价

1

$2.2995

$2.2995

10

$2.0685

$20.6850

25

$1.9530

$48.8250

100

$1.6590

$165.9000

250

$1.5645

$391.1250

500

$1.3650

$682.5000

1000

$1.1340

$1,134.0000

2500

$1.0500

$2,625.0000

5000

$1.0185

$5,092.5000

10000

$0.9765

$9,765.0000

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产品参数
产品说明
PDF(1)
类型描述
制造商IR (Infineon Technologies)
系列OptiMOS™ 5
包装卷带式 (TR)
产品状态ACTIVE
包装/箱8-PowerTDFN
安装类型Surface Mount
工作温度-55°C ~ 150°C (TJ)
技术MOSFET (Metal Oxide)
场效应管类型N-Channel
电流 - 连续漏极 (Id) @ 25°C10.7A (Ta), 76A (Tc)
Rds On(最大)@Id、Vgs10.5mOhm @ 40A, 10V
功耗(最大)2.5W (Ta), 125W (Tc)
Vgs(th)(最大值)@Id2.3V @ 91µA
供应商设备包PG-TDSON-8
驱动电压(最大导通电阻、最小导通电阻)4.5V, 10V
Vgs(最大)±20V
漏源电压 (Vdss)150 V
栅极电荷 (Qg)(最大值)@Vgs23 nC @ 4.5 V
输入电容 (Ciss)(最大值)@Vds3000 pF @ 75 V

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IC EEPROM 1KBIT MICROWIRE 8SOIC
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SENSOR OPT REFLECTIVE 5MM 5DIP
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